22 June 2006 Error rate improvement of super-RENS random signal with the minimum mark length of 75nm in 405nm 0.85 NA system
Author Affiliations +
Proceedings Volume 6282, Optical Data Storage 2006; 628217 (2006) https://doi.org/10.1117/12.685237
Event: Optical Data Storage 2006, 2006, Montréal, Canada
Abstract
We report the error rate improvement of super-resolution near field structure (Super-RENS) write-once read-many (WORM) disk at a blue laser optical system. (Laser wavelength 405nm, numerical aperture 0.85) We used a disk of which carrier level (CL) of 75nm is improved from -26.3 dBm to -19.0 dBm. We controlled the equalization (EQ) profile characteristics and used the adaptive 5 symbol write strategy and advanced high tap partial-response maximum likelihood (PRML) technique in order to improve the bit error rate (bER) characteristics of the super-RENS random signal. As a result, we obtained bER of 10-4 level with new signal processing techniques and bit error analysis process. This result shows high feasibility of super-RENS technology for practical use in the near future.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jaecheol Bae, Jaecheol Bae, Jooho Kim, Jooho Kim, Inoh Hwang, Inoh Hwang, Hyunki Kim, Hyunki Kim, Jinkyung Lee, Jinkyung Lee, Hyunsoo Park, Hyunsoo Park, Insik Park, Insik Park, Junji Tominaga, Junji Tominaga, } "Error rate improvement of super-RENS random signal with the minimum mark length of 75nm in 405nm 0.85 NA system", Proc. SPIE 6282, Optical Data Storage 2006, 628217 (22 June 2006); doi: 10.1117/12.685237; https://doi.org/10.1117/12.685237
PROCEEDINGS
6 PAGES


SHARE
Back to Top