22 June 2006 Crystallization characteristics and recording mechanism of a-Si/Ni bilayer and its potential for use in write-once Blu-ray disc
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Proceedings Volume 6282, Optical Data Storage 2006; 62821W (2006) https://doi.org/10.1117/12.685186
Event: Optical Data Storage 2006, 2006, Montréal, Canada
Abstract
The crystallization characteristics and recording mechanism of the a-Si (20nm)/Ni (5 nm) bilayer recording film have been studied. Upon heating, the formation of the metastable NiSi phase occurred at about 200oC, followed by the formation of the thermodynamically favored NiSi2 phase at ~ 400oC, and the crystallization of a-Si mediated by the Ni silicides below 600oC, indicating that inserting a thin Ni layer could effectively reduce the crystallization temperature of a-Si. As Si atoms of approximately 92 at% were consumed by NiSi2 phase formation, the reflectivity increase of the a-Si/Ni bilayer recording film was contributed to the formation of NiSi2 phase. The activation energy for Ni silicide formation was determined to be 1.98 eV. The a-Si/Ni bilayer exhibited an optical contrast of 20% and abosrptance of 54%, which can provide high enough CNR and adequate recording sensitivity. After irradiated by a 405 nm blue laser pulse, a recording mark consisting of NiSi2 was clearly formed in the a-Si/Ni bilayer. Under the dynamic test, CNR of 37 dB was achieved at a recording power of 4 mW, demonstrating that the a-Si/Ni bilayer recording film shows a great potential for use in write-once Blu-ray disk.
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Yung-Chiun Her, Yung-Chiun Her, Sen-Tsun Jean, Sen-Tsun Jean, } "Crystallization characteristics and recording mechanism of a-Si/Ni bilayer and its potential for use in write-once Blu-ray disc", Proc. SPIE 6282, Optical Data Storage 2006, 62821W (22 June 2006); doi: 10.1117/12.685186; https://doi.org/10.1117/12.685186
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