22 June 2006 Investigation of external feedback effects on relative intensity noise characteristics of 405 nm InAlGaN laser diodes
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Proceedings Volume 6282, Optical Data Storage 2006; 628221 (2006) https://doi.org/10.1117/12.685192
Event: Optical Data Storage 2006, 2006, Montréal, Canada
Abstract
The external feedback effect on the relative intensity noise characteristics of 405 nm InAlGaN laser diode has been analyzed taking into account the spontaneous emission noise and the high frequency modulation of the injection current. A Langevin diffusion model was exploited to characterize its relative intensity noise. The spontaneous emission noise components were quantitatively evaluated from the optical gain properties of the InAlGaN multiple quantum well active regions by using the multiband Hamiltonian for the strained wurtzite crystals. The extracted parameters were applied to the rate equations taking into account the external feedback and external current modulation effects. The simulation results were investigated to optimize the relative intensity noise characteristics.
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Jong Chang Yi, Jong Chang Yi, Jin-Yong Kim, Jin-Yong Kim, } "Investigation of external feedback effects on relative intensity noise characteristics of 405 nm InAlGaN laser diodes", Proc. SPIE 6282, Optical Data Storage 2006, 628221 (22 June 2006); doi: 10.1117/12.685192; https://doi.org/10.1117/12.685192
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