Electron beam lithography time dependent dose correction for reticle CD uniformity enhancement

Nathan Wilcox; Matt Vernon; Andrew Jamieson

doi:10.1117/12.681734

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20 May 2006 Electron beam lithography time dependent dose correction for reticle CD uniformity enhancement

Nathan Wilcox, Matt Vernon, Andrew Jamieson

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Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 628307 (2006) https://doi.org/10.1117/12.681734
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan

Abstract

This paper includes an empirical determination of the relative CD error as a function of in-vacuum post exposure delay (PED). The effects of local pattern density and the impact of reticle proximity effect correction on the in-vacuum PED CD bias error are also considered. Results of dose compensation to improve CD uniformity on both artifact and production reticles are reviewed. The results show that by applying an exposure time dependent dose correction, the CD bias dependency upon in-vacuum PED is effectively compensated. In addition, the results show that dose compensation is effective at correcting for the in-vacuum PED dependency of local pattern density proximity errors. Finally, the paper concludes with a brief discussion of the relationship between existing reticle CD correction techniques for errors including electron beam fogging, etch loading, stable reticle process spatial CD non-uniformities and the new time dependent dose correction.

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Nathan Wilcox, Matt Vernon, and Andrew Jamieson "Electron beam lithography time dependent dose correction for reticle CD uniformity enhancement", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 628307 (20 May 2006); https://doi.org/10.1117/12.681734

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