Translator Disclaimer
Paper
20 May 2006 Electron beam lithography time dependent dose correction for reticle CD uniformity enhancement
Author Affiliations +
Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 628307 (2006) https://doi.org/10.1117/12.681734
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan
Abstract
This paper includes an empirical determination of the relative CD error as a function of in-vacuum post exposure delay (PED). The effects of local pattern density and the impact of reticle proximity effect correction on the in-vacuum PED CD bias error are also considered. Results of dose compensation to improve CD uniformity on both artifact and production reticles are reviewed. The results show that by applying an exposure time dependent dose correction, the CD bias dependency upon in-vacuum PED is effectively compensated. In addition, the results show that dose compensation is effective at correcting for the in-vacuum PED dependency of local pattern density proximity errors. Finally, the paper concludes with a brief discussion of the relationship between existing reticle CD correction techniques for errors including electron beam fogging, etch loading, stable reticle process spatial CD non-uniformities and the new time dependent dose correction.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nathan Wilcox, Matt Vernon, and Andrew Jamieson "Electron beam lithography time dependent dose correction for reticle CD uniformity enhancement", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 628307 (20 May 2006); https://doi.org/10.1117/12.681734
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
Back to Top