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20 May 2006 Study of higher electron beam energy for the mask production for 30 nm node technology
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Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 628308 (2006) https://doi.org/10.1117/12.681735
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan
Abstract
Recently, the mask writing technology with 50keV electron beam energy is close to its resolution limit. It will be hard to achieve 30nm node mask pattern in near future. Especially the writing of OPC and 2-D patterns will be critical issue. Furthermore, according to the shrinking of pattern, the tight mask CD uniformity is required due to large MEEF. About 2.4nm mask CD uniformity will be required in terms of 3σ. In this report, we analyze the beam energy effect on the resolution improvement using the quantitative analysis of beam blurring including the resist effect. From the experimental result, the total blur is about 45.57nm with 50keV VSB and 43.70nm with 100keV spot beam. And we compare the dose margin and linearity for each case. Dose margin by 50keV VSB is 0.96nm/%dose and 0.89nm/%dose for 100keV spot beam. We conclude that the effect by the increasing of electron beam energy is not so much significant and the reduction of the blur by electron beam column is as much as efficient. And finally we calculate the limitation of CD uniformity for each case.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sanghee Lee, Sungho Park, Byunggook Kim, Seongwoon Choi, and Woosung Han "Study of higher electron beam energy for the mask production for 30 nm node technology", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 628308 (20 May 2006); https://doi.org/10.1117/12.681735
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