20 May 2006 Real time analysis of the haze environment trapped between the pellicle film and the mask surface
Author Affiliations +
Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 62830A (2006) https://doi.org/10.1117/12.681736
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan
Abstract
With the use of 193nm lithography, time-dependent haze problem has become a critical issue for semiconductor industry. The understanding of the conditions that create haze defects is very crucial for the future development of haze-free cleaning processes. The gaseous environment trapped between the pellicle film and the mask surface triggers photochemical reaction under laser exposure, which could result in the formation of killer (printable) defects on the mask surface. Therefore, the real time analysis of the haze environment in the trapped space could provide essential clues to the characterization of haze defect growth mechanism. This fundamental study can be applied to the invention of real-time monitoring tools for the defect growth progress on the mask surface as well as the development of haze-free cleaning processes. Here, we propose a method to analyze the gaseous space trapped between the pellicle film and the mask surface that creates a highly reactive environment.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jaehyuck Choi, Seungyeon Lee, Yongjin Cho, Sunghun Ji, Byung Cheol Cha, Sung Woon Choi, Woo Sung Han, "Real time analysis of the haze environment trapped between the pellicle film and the mask surface", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62830A (20 May 2006); doi: 10.1117/12.681736; https://doi.org/10.1117/12.681736
PROCEEDINGS
7 PAGES


SHARE
Back to Top