EUV mask development status at ASET and DNP

Tsukasa Abe; Akiko Fujii; Hiroshi Mohri; Naoya Hayashi; Yuusuke Tanaka; Iwao Nishiyama

doi:10.1117/12.681840

20 May 2006 EUV mask development status at ASET and DNP

Tsukasa Abe, Akiko Fujii, Hiroshi Mohri, Naoya Hayashi, Yuusuke Tanaka, Iwao Nishiyama

Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 62830H (2006) https://doi.org/10.1117/12.681840
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan

Abstract

Dry etch process of ASET developed EUV blank was evaluated. ASET blank used TaGeN for absorber layer and Cr for buffer layer. CF4 gas process and Cl2 gas process were evaluated for TaGeN absorber layer dry etching. Because of advantages of small buffer layer damage and etching stability, CF4 gas process was selected as our standard process for TaGeN etching. Cl2 and O2 mixture gas was used for Cr buffer layer dry etching. After buffer layer dry etching, EUV reflectivity and wafer print were tested. AFM nano-machining was applied to absorber layer defect repair. Repair results were evaluated using SEM, AFM and wafer print test. EUV mask fabrication process was also developed for commercial EUV blank.

Citation Download Citation

Tsukasa Abe, Akiko Fujii, Hiroshi Mohri, Naoya Hayashi, Yuusuke Tanaka, and Iwao Nishiyama "EUV mask development status at ASET and DNP", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62830H (20 May 2006); https://doi.org/10.1117/12.681840

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