20 May 2006 EUV mask development status at ASET and DNP
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Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 62830H (2006) https://doi.org/10.1117/12.681840
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan
Abstract
Dry etch process of ASET developed EUV blank was evaluated. ASET blank used TaGeN for absorber layer and Cr for buffer layer. CF4 gas process and Cl2 gas process were evaluated for TaGeN absorber layer dry etching. Because of advantages of small buffer layer damage and etching stability, CF4 gas process was selected as our standard process for TaGeN etching. Cl2 and O2 mixture gas was used for Cr buffer layer dry etching. After buffer layer dry etching, EUV reflectivity and wafer print were tested. AFM nano-machining was applied to absorber layer defect repair. Repair results were evaluated using SEM, AFM and wafer print test. EUV mask fabrication process was also developed for commercial EUV blank.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tsukasa Abe, Tsukasa Abe, Akiko Fujii, Akiko Fujii, Hiroshi Mohri, Hiroshi Mohri, Naoya Hayashi, Naoya Hayashi, Yuusuke Tanaka, Yuusuke Tanaka, Iwao Nishiyama, Iwao Nishiyama, } "EUV mask development status at ASET and DNP", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62830H (20 May 2006); doi: 10.1117/12.681840; https://doi.org/10.1117/12.681840
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