20 May 2006 A study of damage mechanisms during EUV mask substrate cleaning
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Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 62830I (2006) https://doi.org/10.1117/12.681841
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan
Abstract
Defects on an extreme ultraviolet (EUV) mask blank strongly depend on the defects on the mask blank substrate. Any imperfection on the substrate surface in the form of a particle, pit, and scratch will appear on the EUV mask blank. In this article, we study the effect of the cleaning process on the creation of defects on the EUV substrate and mask blank. Added particles could be removed by improving the cleaning tool and the cleaning process. Pits are generally created when many large defects, particularly glass-like materials, are present on the surface and the substrate is exposed to a high energy cleaning step. Comparison of different high energy steps in a typical cleaning process suggests that the megasonic step most likely creates pits. Current cleaning processes developed in the Mask Blank Development Center (MBDC) have been optimized so that no added pits or particles are observed after using them.
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Abbas Rastegar, Abbas Rastegar, Sean Eichenalub, Sean Eichenalub, Kurt Goncher, Kurt Goncher, Pat Marmillion, Pat Marmillion, "A study of damage mechanisms during EUV mask substrate cleaning", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62830I (20 May 2006); doi: 10.1117/12.681841; https://doi.org/10.1117/12.681841
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