20 May 2006 Mask pattern correction to compensate for the effect of off-axis incidence in EUV lithography
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Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 62830L (2006) https://doi.org/10.1117/12.681845
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan
Abstract
This study investigated the feasibility of individual mask-pattern corrections to compensate for the effects of off-axis incidence and optical proximity effects for a reflective mask in EUV lithography. Individual mask pattern corrections for the effects of off-axis incidence are made by biasing, and then merged with conventional optical proximity effect corrections (OPC). This method provides good pattern fidelity in printed images on a wafer. Three evaluation functions were used to determine the amount of bias; they are related to the energy of the light reflected from a mask surface, the energy of 0th-order diffracted light, and the energy of light passing through the pupil. Merging to obtain the final corrected mask pattern allows the use of conventional OPC algorithms and is a simple method that is applicable regardless of the relationship between the direction of the incident light and the orientation of the edges of mask patterns.
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Minoru Sugawara, Minoru Sugawara, Iwao Nishiyama, Iwao Nishiyama, } "Mask pattern correction to compensate for the effect of off-axis incidence in EUV lithography", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62830L (20 May 2006); doi: 10.1117/12.681845; https://doi.org/10.1117/12.681845
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