19 May 2006 Development of advanced reticle inspection apparatus for hp 65 nm node device and beyond
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Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 62830Y (2006) https://doi.org/10.1117/12.683579
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan
The usage of ArF immersion lithography for hp 65nm node and beyond leads to the increase of mask error enhancement factor in the exposure process. Wavelength of inspection tool is required to consistent with wavelength of lithography tool. Wavelength consistency becomes more important by the introduction of phase shift mask such as Tri-tone mask and alternating phase shift mask. Therefore, mask inspection system, whose inspection light wavelength is 199nm, has been developed. This system has transmission and reflection inspection mode, and throughput, using 70 nm pixel size, were designed within 2hours per mask. The experimental results show expected advantages for Die-to-Die and Die-to-Database inspection compared with the system using 257nm inspection optics. Shorter wavelength effect makes transmission inspection sensitivity increase, and realizes 40nm size particle inspection. As for the phase shift mask, the difference of gray value between the area with phase defect and without phase defect was clear relatively. In this paper, specifications and design, experimental results are described.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nobutaka Kikuiri, Nobutaka Kikuiri, Shingo Murakami, Shingo Murakami, Hideo Tsuchiya, Hideo Tsuchiya, Motonari Tateno, Motonari Tateno, Kenichi Takahara, Kenichi Takahara, Shinichi Imai, Shinichi Imai, Ryoichi Hirano, Ryoichi Hirano, Ikunao Isomura, Ikunao Isomura, Yoshitake Tsuji, Yoshitake Tsuji, Yukio Tamura, Yukio Tamura, Kenichi Matsumura, Kenichi Matsumura, Kinya Usuda, Kinya Usuda, Masao Otaki, Masao Otaki, Osamu Suga, Osamu Suga, Katsumi Ohira, Katsumi Ohira, } "Development of advanced reticle inspection apparatus for hp 65 nm node device and beyond", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62830Y (19 May 2006); doi: 10.1117/12.683579; https://doi.org/10.1117/12.683579

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