20 May 2006 Advanced photomask repair technology for 65-nm lithography
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Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 628310 (2006) https://doi.org/10.1117/12.681859
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan
Abstract
Repair technology for 65nm generation photomasks requires more accurate shape and transmittance. The objective of this study is to evaluate FIB repair process with low acceleration voltage. The evaluation items were imaging impact, defect visibility, repaired shape, through focus behavior, repeatability of edge placement and controllability of repair size. In conclusion, we confirmed that FIB repair process with low acceleration voltage is applicable to 65nm generation photomasks.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fumio Aramaki, Fumio Aramaki, Tomokazu Kozakai, Tomokazu Kozakai, Yasuhiko Sugiyama, Yasuhiko Sugiyama, Masashi Muramatsu, Masashi Muramatsu, Yoshihiro Koyama, Yoshihiro Koyama, Osamu Matsuda, Osamu Matsuda, Katsumi Suzuki, Katsumi Suzuki, Mamoru Okabe, Mamoru Okabe, Ryoji Hagiwara, Ryoji Hagiwara, Anto Yasaka, Anto Yasaka, Tatsuya Adachi, Tatsuya Adachi, Yoshiyuki Tanaka, Yoshiyuki Tanaka, Osamu Suga, Osamu Suga, Naoki Nishida, Naoki Nishida, Youichi Usui, Youichi Usui, } "Advanced photomask repair technology for 65-nm lithography", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 628310 (20 May 2006); doi: 10.1117/12.681859; https://doi.org/10.1117/12.681859
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