Mask repair technique assessment and development for the 45nm lithographic node

H. Marchman; D. Taylor; S. Hadisutjipto; S. Mackay; R. Cottle; J. Maltabes; J. Brown

doi:10.1117/12.681862

19 May 2006 Mask repair technique assessment and development for the 45nm lithographic node

H. Marchman, D. Taylor, S. Hadisutjipto, S. Mackay, R. Cottle, J. Maltabes, J. Brown

Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 628311 (2006) https://doi.org/10.1117/12.681862
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan

Abstract

The efficacy of currently available repair techniques has been assessed for a wide variety of defect types encountered on advanced lithographic masks. Focused ion beam (FIB) with gas-assisted etching and deposition, electron beam induced chemical processing (EBIC), and atomic force microscope based nano-machining (RAVE) were among the different methodologies evaluated. Various types of optical phase-shifting masks for the 45nm lithographic node, as well as nano-imprint lithography (NIL) templates, were used as test vehicles. Defect imaging resolution, spatial process confinement, repair edge placement, end-pointing control, sample damage (undesired changes in topographic or optical properties), and future extendibility served as the primary metrics for gauging repair performance. The primary aim of this study was to provide a single "snapshot" in time of the current development status of each tool for the context of 45nm node mask repair specifications and by no means were there any expectations for a final solution to already be commercially available. However, the results obtained from these tests should provide useful feedback and information to help improve the learning cycle for the development of 45nm lithographic node mask repair systems.

Citation Download Citation

H. Marchman, D. Taylor, S. Hadisutjipto, S. Mackay, R. Cottle, J. Maltabes, and J. Brown "Mask repair technique assessment and development for the 45nm lithographic node", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 628311 (19 May 2006); https://doi.org/10.1117/12.681862

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
17 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Photomasks

Ions

Etching

Ion beams

Lithography

Molecules

Electron beams

Show All Keywords

Keywords/Phrases

Search In:

Publication Years