19 May 2006 Assessment of wafer pattern prediction accuracy by introducing effectively equivalent mask patterns
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Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 62831B (2006) https://doi.org/10.1117/12.681874
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan
Abstract
Mask topography effects arise important components of optical image formation at 45nm node and beyond for attenuated Phase Shift Mask (attPSM). Since calculation of mask topography effects based on rigorous model is very costly, it is unrealistic for Optical Proximity Correction (OPC) and lithography design. This paper investigates an approximation model that takes mask topography effects into consideration. We propose the concept of Effectively Equivalent Mask Patterns (EEMP) method to obtain approximated optical images which include mask topography effects. We found mask space width is the main factor among mask topography effects. For realizing the EEMP method, we introduce and evaluate two approximation methods for mask topography effects. One is the simple space model and the other is the Proximity Mask Opening (PMO) model, which is a model of waveguide effects. EEMP with PMO model can improve prediction accuracy at both 1-dimensional and 2-dimensional patterns and increase in run time for EEMP with PMO model is 40 percent of that required for thin film simulations.
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M. Satake, M. Satake, A. Mimotogi, A. Mimotogi, S. Tanaka, S. Tanaka, S. Mimotogi, S. Mimotogi, K. Hashimoto, K. Hashimoto, S. Inoue, S. Inoue, } "Assessment of wafer pattern prediction accuracy by introducing effectively equivalent mask patterns", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62831B (19 May 2006); doi: 10.1117/12.681874; https://doi.org/10.1117/12.681874
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