20 May 2006 Simulation of dry etch profile dynamics and CD variation due to microloading
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Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 62831R (2006) https://doi.org/10.1117/12.681753
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan
Abstract
Establishing parameters and tuning a dry etch process is an important task in maskmaking. Simulation should complement the time-consuming experiments to reduce cost and shorten development time. TRAVIT is a dry etch simulation tool that has been developed to simulate etch profiles, linewidths, and microloading dependent variation of critical dimensions (CD) resulting from dry etch. The software accepts GDS patterns, materials, initial resist profile, and process parameters. A mathematical model was further developed for more accurate predictions of etch profile while keeping simulation speed high to account for CD variation. Special attention was given to the footing effect. It contributes to significant CD variation if the etch time after end-point detection is not long enough. On the other hand, overetch leads to increased etch bias, which is not desirable. The simulation helps to optimize the post-etch time and minimize CD variation and bias.
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S. Babin, K. Bay, S. Okulovsky, "Simulation of dry etch profile dynamics and CD variation due to microloading", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62831R (20 May 2006); doi: 10.1117/12.681753; https://doi.org/10.1117/12.681753
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