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20 May 2006 Advanced hybrid mask process development
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Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 62831S (2006) https://doi.org/10.1117/12.681754
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan
Abstract
CPL technology is one of the powerful methods for Resolution Enhancement Technology. With high NA and strong off-axis illumination CPL has a very high resolution and is capable of printing complex 2D patterns. Image using off-axis illumination with an attenuated phase shift mask can also improve process latitude. We can combine two technologies in one mask with same off-axis illumination condition to have more flexible application. Normally CPL technology is applied in binary mask and Qz is etched for 180 degree phase. To fulfill this hybrid mask we can apply Qz etch in current normal attenuate PSM blank and E-Beam 2nd writing is also can be applied for the zebra structure. To form the different application in different area we use 5 times writing in this hybrid mask process. Also the Qz etching process is very important because the Qz etching is strongly related to the Cr-Mosi-Qz three layer profile. So a L9 DOE has been applied for Qz etching parameter fine tuning. We will optimize the phase uniformity, phase linearity, profile, CD linearity and CD proximity through the DOE.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Orson Lin, Jomarch Chou, K. K. Fu, Booky Lee, Richard Lu, Jerry Lu, and Chiang-Lin Shi "Advanced hybrid mask process development", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62831S (20 May 2006); https://doi.org/10.1117/12.681754
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