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20 May 2006 Chrome etch challenges for 45 nm and beyond
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Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 62831V (2006)
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan
Requirements to meet the 45nm technology node place significant challenges on Mask makers. Resolution Enhancement Techniques (RET) employed to extend optical lithography in order to resolve sub-resolution features, have burdened mask processes margins. Also, Yield compromises loom with every nanometer of error incurred on the Mask and the Device platforms. RET techniques, such as Optical Proximity Correction (OPC), require the Mask Etcher to achieve exceptionally tight control of Critical Dimensions (CD). This ensures OPC feature integrity on the mask and resultant image fidelity of OPC structures, as well as, subsequently high and sustainable yields. This paper talks about 45 nm Chrome etch challenges and how Applied Materials Tetra IITM etcher provides solutions to these challenges.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Madhavi Chandrachood, Michael Grimbergen, Ibrahim M. Ibrahim, Sheeba Panayil, and Ajay Kumar "Chrome etch challenges for 45 nm and beyond", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62831V (20 May 2006);


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