20 May 2006 Mask etcher data strategy for 45 nm and beyond
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Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 62831W (2006) https://doi.org/10.1117/12.681760
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan
Abstract
Mask Etching for the 45nm technology node and beyond requires a system-level data and diagnostics strategy. This necessity stems from the need to control the performance of the mask etcher to increasingly stringent and diverse requirements of the mask production environment. Increasing mask costs and the capability to acquire and consolidate a wealth of data within the mask etch platform are primary motivators towards harnessing data mines for feedback into the mask etching optimization. There are offline and real-time possibilities and scenarios. Here, we discuss the data architecture, acquisition, and strategies of the Applied Materials Tetra IITM Mask Etch System.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard Lewington, Richard Lewington, Ibrahim M. Ibrahim, Ibrahim M. Ibrahim, Sheeba Panayil, Sheeba Panayil, Ajay Kumar, Ajay Kumar, John Yamartino, John Yamartino, } "Mask etcher data strategy for 45 nm and beyond", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62831W (20 May 2006); doi: 10.1117/12.681760; https://doi.org/10.1117/12.681760
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