20 May 2006 Mask cleaning strategies: a continuous ion removal concept
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Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 628325 (2006) https://doi.org/10.1117/12.681772
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan
Abstract
Researchers have linked the occurrence of reticle haze to many parameters which include cumulative irradiation, the greater use of 193nm in low-k1 lithography, humidity and the presence of ammonium with other process contaminants. Published methods of contaminant reduction include 1) volatilization by thermal treatment 2) induced preemptive crystallization with 172nm eximer energy followed by subsequent ozone-water and megasonic treatments and 3) hot water treatments. In this paper we explore the process characteristics necessary to achieve a new method of continuous ion removal which includes sustained plate temperature during UV treatment and the sublimation of ammonium crystals. The application of these principles are consistent with room temperature (RT) fluid flows which allow us to work within a regime of negligible phase angle, negligible transmissivity change and silicon nitride removal efficiencies above 99% for particles as small as 80nm.
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Steve Osborne, Steve Osborne, Hidekazu Takahashi, Hidekazu Takahashi, Eric Woster, Eric Woster, } "Mask cleaning strategies: a continuous ion removal concept", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 628325 (20 May 2006); doi: 10.1117/12.681772; https://doi.org/10.1117/12.681772
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