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20 May 2006 The characterization of line-width in mask using spectrophotometry
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Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 62832H (2006) https://doi.org/10.1117/12.681791
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan
Abstract
Spectrophotometry has been applied to the characterization of pattered mask line-width. Variations in the line-width by few nanometers can be distinguished by comparing spectrum profiles of reflectance or transmittance in spectrophotometry. It can be theoretically explained that the variations in the spectrum profiles are caused by CD bias of the patterned film. Experimental results also show that the positions of the spectrums along wavelength axis are related to the CD bias measured under CD-SEM. As a result, both spectra could be used to estimate quickly the line-width of patterned mask without in-depth analysis.
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Kyoung-Yoon Bang, Yo-Han Choi, Han-June Yoon, Hae-Young Jeong, Yong-Hoon Kim, Seung-Woon Choi, Hee-Sun Yoon, and Woo-Sung Han "The characterization of line-width in mask using spectrophotometry", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62832H (20 May 2006); doi: 10.1117/12.681791; https://doi.org/10.1117/12.681791
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