20 May 2006 Lithographic performance comparison with various RET for 45-nm node with hyper NA
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Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 62832W (2006) https://doi.org/10.1117/12.681813
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan
Abstract
In order to realize 45 nm node lithography, strong resolution enhancement technology (RET) and water immersion will be needed. In this research, we discussed about various RET performance comparison for 45 nm node using 3D rigorous simulation. As a candidate, we chose binary mask (BIN), several kinds of attenuated phase-shifting mask (att-PSM) and chrome-less phase-shifting lithography mask (CPL). The printing performance was evaluated and compared for each RET options, after the optimizing illumination conditions, mask structure and optical proximity correction (OPC). The evaluation items of printing performance were CD-DOF, contrast-DOF, conventional ED-window and MEEF, etc. It's expected that effect of mask 3D topography becomes important at 45 nm node, so we argued about not only the case of ideal structures, but also the mask topography error effects. Several kinds of mask topography error were evaluated and we confirmed how these errors affect to printing performance.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takashi Adachi, Takashi Adachi, Yuichi Inazuki, Yuichi Inazuki, Takanori Sutou, Takanori Sutou, Yasuhisa Kitahata, Yasuhisa Kitahata, Yasutaka Morikawa, Yasutaka Morikawa, Nobuhito Toyama, Nobuhito Toyama, Hiroshi Mohri, Hiroshi Mohri, Naoya Hayashi, Naoya Hayashi, } "Lithographic performance comparison with various RET for 45-nm node with hyper NA", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62832W (20 May 2006); doi: 10.1117/12.681813; https://doi.org/10.1117/12.681813
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