20 May 2006 Model-based insertion of assist features using pixel inversion method: implementation in 65 nm node
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Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 62832Y (2006) https://doi.org/10.1117/12.681816
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan
Abstract
Sub-resolution assist feature (SRAF) is widely used to improve lithographic performance. Rule-based SRAF insertion has been working well for one dimensional cases but becomes quite complex for 2-dimensional arbitrary layout. In addition, the best rule generation involves a large amount of simulation and empirical data collection. Therefore model-based SRAF insertion is much more desirable especially for 65nm node and below. In this work we use the newly developed pixel inversion method for a true model-based SRAF insertion. We'll extend our work from contact layer to lines and spaces layer to demonstrate the capability of this method for all critical layers of 65nm node. This method will be used in combination with model-based OPC to achieve the required overlapping process window and CD control. Furthermore, the manufacture issues such as mask making time and mask inspection will be examined and reported.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chi-Yuan Hung, Qingwei Liu, Kyohei Sakajiri, Shumay D. Shang, Yuri Granik, "Model-based insertion of assist features using pixel inversion method: implementation in 65 nm node", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62832Y (20 May 2006); doi: 10.1117/12.681816; https://doi.org/10.1117/12.681816
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