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20 May 2006 Model based SRAF insertion check with OPC verify tools
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Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 628332 (2006)
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan
With the critical dimension of IC design decreases dramatically, to meet the yield target of the manufacture process, resolution enhancement technologies become extremely important nowadays. For 90nm technology node and below, sub rule assistant feature (SRAF) are usually employed to enhance the robustness of the micro lithography process. SRAF is really a powerful methodology to push the process limit for given equipment conditions. However, there is also a drawback of the SRAF. It is very hard to check the reasonability of the SRAF location, especially when SRAF is applied on full chips. This work is trying to demonstrate a model-based approach to do full-chip check of the SRAF insertion rule. First, we try to capture the lithography process information through real empirical wafer data. Then we try to check every SRAFs location and to find any hot spot that has the risk of being printed out on the wafer. Based on this approach, we can then not only apply full chip check to reduce the printability of SRAF. Furthermore, combined with DRC tools, we can find SRAFs that are inserted unreasonably and then apply modification on them.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chi-Yuan Hung, Zexi Deng, Gensheng Gao, Liguo Zhang, and Qingwei Liu "Model based SRAF insertion check with OPC verify tools", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 628332 (20 May 2006);


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