20 May 2006 Robust OPC technique using aerial image parameter
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Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 628333 (2006) https://doi.org/10.1117/12.681821
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan
The mainstream of resolution enhancement techniques (RET) to critical layers is model-based optical-proximity-effect-correction (OPC) at the 90-nm node and below. For model-based OPC, the simulation model is calibrated using a test pattern transferred onto the wafer on a best dose and best focus condition, so process variations (i.e. focus, exposure dose, etc) cause pinching or bridging (open or short error), otherwise called a hotspot. The technique of reducing hotspots by sub-resolution assist features (SRAFs) and litho-friendly layout are already proposed. However, these methods sometimes cannot improve hotspots by design layouts or the post-OPC shapes. We have developed the technique which improves hotspots by additional modification to the post-OPC patterns of hotspots.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mikio Oka, Mikio Oka, Shinichiro Suzuki, Shinichiro Suzuki, Kazuyoshi Kawahara, Kazuyoshi Kawahara, Kensuke Tsuchiya, Kensuke Tsuchiya, Kazuhisa Ogawa, Kazuhisa Ogawa, Hidetoshi Ohnuma, Hidetoshi Ohnuma, "Robust OPC technique using aerial image parameter", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 628333 (20 May 2006); doi: 10.1117/12.681821; https://doi.org/10.1117/12.681821


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