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20 May 2006 Resist and etch modeling for the 45nm node
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Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 628334 (2006) https://doi.org/10.1117/12.681822
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan
Abstract
For the 45nm node and beyond, ever smaller CD budgets require tighter control over the entire process, demanding more accuracy from optical proximity correction (OPC). With the industry adoption of model-based over the traditional rules-based approach, OPC has come a long way to improve accuracy. Today, it is time to do the same for another important step in the process: dry etch. Here we demonstrate the accuracy of etch modeling for a 45nm node process. All experiments were conducted at IMEC with an immersion scanner using off axis illumination. Etch was achieved using a non-optimal recipe to exhibit an iso-dense bias effect. SEM data was extracted using a novel tool to automatically remove any experimental noise. Model calibration was performed with ProgenTM using standard and novel etch-sensitive structures. Model accuracy and predictability was verified with comparing modeled 2D contours against CD SEM measurements and images.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin Drapeau and Dan Beale "Resist and etch modeling for the 45nm node", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 628334 (20 May 2006); https://doi.org/10.1117/12.681822
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