20 May 2006 The study of contact hole for 65nm node with KrF
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Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 628336 (2006) https://doi.org/10.1117/12.681825
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan
Abstract
The contact hole patterning has been huge challenge in the photolithography since sub-100nm node device. There are many difficulties for NA (Numerical Aperture) and illumination optimization, especially since dense and sparse contact holes are mixed in the same mask. The high NA and OAI (Off Axis Illumination) have strong improvements for pattern fidelity and process margin in case of dense contact holes but DoF (Depth of Focus) margin is a problem for sparse patterns. The lithography engineers have two ways to overcome these contact holes patterning problems. The one is using the resist techniques such as resist thermal flow, SAFIER (Shrink Assist Techniques for Enhanced Resolution), RELACS (Resolution Enhancement Lithography Assisted by Chemical Shrink) and the other is optimizing illumination and mask layout such as SRAF (Sub Resolution Assist Feature), OAI and PSM (Phase Shift Mask), double exposure. This paper will discuss contact hole patterning results using a combination OAI and SRAF with KrF.
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Tae-Jun You, Tae-Jun You, Sung-Woo Ko, Sung-Woo Ko, James Moon, James Moon, Yeong-Bae Ahn, Yeong-Bae Ahn, Byung-Ho Nam, Byung-Ho Nam, Dong-Gyu Yim, Dong-Gyu Yim, } "The study of contact hole for 65nm node with KrF", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 628336 (20 May 2006); doi: 10.1117/12.681825; https://doi.org/10.1117/12.681825
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