20 May 2006 TaN-based EUV mask absorber etch study
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Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 62833D (2006) https://doi.org/10.1117/12.681832
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan
Extreme ultraviolet lithography (EUVL) is one of the leading candidates for the next generation lithography. As the requirement on critical dimension (CD) and side wall profile control becomes ever stringent as minimum feature sizes keep shrinking following the Semiconductor Industry Association (SIA) roadmap, the patterning of the EUV mask absorber material, cost of ownership (COO) of mask, and the capability for defect free EUV masks become the crucial path in enabling the overall success of EUV lithography. The purpose of this study is to understand the etch characteristics in TaN-based EUV mask absorber etch, which will enable us to determine robust process condition in terms of CD performance and profile control. In this paper, CD bias performance in TaN-based EUV mask absorber etching is investigated within inductively coupled plasma (ICP) of fluorine-containing and chlorine-containing gas chemistries. The effects of etch parameters, such as plasma source power, bias power, and pressure, on the CD bias are evaluated through design of experiments (DOE). Some other etching characteristics like etch rate and selectivity are also correlated to the CD performance and etch profile to understand the basic etch mechanism in TaN etch. Latest etch results of the TaN-based absorber are also presented.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yan Du, Yan Du, Chang Ju Choi, Chang Ju Choi, Guojing Zhang, Guojing Zhang, Seh-Jin Park, Seh-Jin Park, Pei-Yang Yan, Pei-Yang Yan, Ki-Ho Baik, Ki-Ho Baik, "TaN-based EUV mask absorber etch study", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62833D (20 May 2006); doi: 10.1117/12.681832; https://doi.org/10.1117/12.681832

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