Translator Disclaimer
20 May 2006 TaN-based EUV mask absorber etch study
Author Affiliations +
Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 62833D (2006)
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan
Extreme ultraviolet lithography (EUVL) is one of the leading candidates for the next generation lithography. As the requirement on critical dimension (CD) and side wall profile control becomes ever stringent as minimum feature sizes keep shrinking following the Semiconductor Industry Association (SIA) roadmap, the patterning of the EUV mask absorber material, cost of ownership (COO) of mask, and the capability for defect free EUV masks become the crucial path in enabling the overall success of EUV lithography. The purpose of this study is to understand the etch characteristics in TaN-based EUV mask absorber etch, which will enable us to determine robust process condition in terms of CD performance and profile control. In this paper, CD bias performance in TaN-based EUV mask absorber etching is investigated within inductively coupled plasma (ICP) of fluorine-containing and chlorine-containing gas chemistries. The effects of etch parameters, such as plasma source power, bias power, and pressure, on the CD bias are evaluated through design of experiments (DOE). Some other etching characteristics like etch rate and selectivity are also correlated to the CD performance and etch profile to understand the basic etch mechanism in TaN etch. Latest etch results of the TaN-based absorber are also presented.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yan Du, Chang Ju Choi, Guojing Zhang, Seh-Jin Park, Pei-Yang Yan, and Ki-Ho Baik "TaN-based EUV mask absorber etch study", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62833D (20 May 2006);


Chemical durability studies of Ru-capped EUV mask blanks
Proceedings of SPIE (October 17 2008)
Dry etching performance of advanced EUV mask blanks
Proceedings of SPIE (October 13 2011)
Control of the sidewall angle of an absorber stack using...
Proceedings of SPIE (October 17 2008)
Chrome etch for <0.13 um advanced reticle production
Proceedings of SPIE (March 11 2002)
Plasma Sn cleaning integrated in EUV source system
Proceedings of SPIE (March 21 2008)

Back to Top