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20 May 2006 Dry etch technology development for NIL template
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Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 62833G (2006) https://doi.org/10.1117/12.681835
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan
Abstract
Nano-imprint lithography (NIL) is expected as one of the candidates for 32nm node and below. We reported in PMJ2005 that we could achieve 30nm resolution for isolated spaces and 50nm resolution for dense features with tools used in commercial mask shops today, and with modification of widely used resist. We also reported that the CD had shifted non-negligibly from the resist to quartz trench, due to the not-vertical pattern profile of the resist. In this paper, we review the resolution limit with current photomask manufacturing tools and the 100keV spot beam writer, and investigate the pattern line edge roughness. We also report our improvement in quartz dry-etch, in particular the improvement in the pattern profile and the etch depth linearity. We found by using the spot beam writer, we can potentially achieve 10nm isolated space and 35nm dense features, but we need to optimize the resist process.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuuichi Yoshida, Tsuyoshi Amano, Shiho Sasaki, Kimio Itoh, Nobuhito Toyama, Hiroshi Mohri, and Naoya Hayashi "Dry etch technology development for NIL template", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62833G (20 May 2006); doi: 10.1117/12.681835; https://doi.org/10.1117/12.681835
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