28 August 2006 Growth of zinc oxide thin films for optoelectronic application by pulsed laser deposition
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Abstract
Zinc oxide (ZnO) thin films were deposited on quartz, silicon, and polymer substrates by pulsed laser deposition (PLD) technique at different oxygen partial pressures (0.007 mbar to 0.003 mbar). Polycrystalline ZnO films were obtained at room temperature when the oxygen pressure was between 0.003 mbar and .007 mbar, above and below this pressure the films were amorphous as indicated by the X-ray diffraction (XRD). ZnO films were deposited on Al2O3 (0001) at different substrate temperatures varying from 400°C to 600°C and full width half maximum (FWHM) of XRD peak is observed to decrease as substrate temperature increases. The optical band gaps of these films were nearly 3.3 eV. A cylindrical Langmuir probe is used for the investigation of plasma plume arising from the ZnO target. The spatial and temporal variations in electron density and electron temperature are studied. Optical emission spectroscopy is used to identify the different ionic species in the plume. Strong emission lines of neutral Zn, Zn+ and neutral oxygen are observed. No electronically excited O+ cations are identified, which is in agreement with previous studies of ZnO plasma plume.
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K. J. Saji, K. J. Saji, R. Manoj, R. Manoj, R. S. Ajimsha, R. S. Ajimsha, M. K. Jayaraj, M. K. Jayaraj, } "Growth of zinc oxide thin films for optoelectronic application by pulsed laser deposition", Proc. SPIE 6286, Advances in Thin-Film Coatings for Optical Applications III, 62860D (28 August 2006); doi: 10.1117/12.680477; https://doi.org/10.1117/12.680477
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