Optical properties of Er3+ + Yb3+ doped gallium nitride layers

Vaclav Prajzler; Eduardo Alves; Christoph Buchal; Ivan Huttel; Jarmila Spirkova; Jiri Oswald; Jiri Zavadil; Vratislav Perina; Vitezslav Jerabek

doi:10.1117/12.679420

28 August 2006 Optical properties of Er³⁺ + Yb³⁺ doped gallium nitride layers

Vaclav Prajzler, Eduardo Alves, Christoph Buchal, Ivan Huttel, Jarmila Spirkova, Jiri Oswald, Jiri Zavadil, Vratislav Perina, Vitezslav Jerabek

Author Affiliations +

Proceedings Volume 6286, Advances in Thin-Film Coatings for Optical Applications III; 62860K (2006) https://doi.org/10.1117/12.679420
Event: SPIE Optics + Photonics, 2006, San Diego, California, United States

Abstract

We report about properties of Gallium Nitride layers doped by Erbium and Erbium/Ytterbium ions. The GaN layers were fabricated by Metal Organic Chemical Vapor Deposition on sapphire substrate, and Er³⁺ and Yb³⁺ ions were incorporated into the deposited layers by using ion implantation. After the implantation the samples were annealed in nitrogen atmosphere. The structures of the GaN samples were examined by the X-Ray Diffraction analysis; composition of the samples was measured by Rutherford Backscattering Spectroscopy and Elastic Recoil Detection Analysis. The GaN layers had single crystalline hexagonal wurtzite structure and content of Er³⁺ and Er³⁺\Yb³⁺ ranged from 0.05 to 3.38 at. %. The photoluminescence measurement was carried out at excitation of λ_ex = 632.8 nm (temperature 4 K) and λ_ex = 980 nm (room temperature). Photoluminescence spectra taken at 4 K showed typical erbium ⁴I_13/2→⁴I_15/2 emission bands. Some of our samples exhibited the desired emission even at the room temperature, which indicated that the samples were of a good quality what concerned their crystallographic homogeneity, as well as distribution and appropriate concentration of the Er³⁺ and Yb³⁺.

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Vaclav Prajzler, Eduardo Alves, Christoph Buchal, Ivan Huttel, Jarmila Spirkova, Jiri Oswald, Jiri Zavadil, Vratislav Perina, and Vitezslav Jerabek "Optical properties of Er³⁺ + Yb³⁺ doped gallium nitride layers", Proc. SPIE 6286, Advances in Thin-Film Coatings for Optical Applications III, 62860K (28 August 2006); https://doi.org/10.1117/12.679420

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