Theoretical description and experiment to prove the bistability of the semiconductor laser diode

Vítězslav Jeřábek; Ivan Hüttel

doi:10.1117/12.680764

28 August 2006 Theoretical description and experiment to prove the bistability of the semiconductor laser diode

Vítězslav Jeřábek, Ivan Hüttel

Proceedings Volume 6286, Advances in Thin-Film Coatings for Optical Applications III; 62860L (2006) https://doi.org/10.1117/12.680764
Event: SPIE Optics + Photonics, 2006, San Diego, California, United States

Abstract

We report about theoretical results and experiments, which led to the demonstration of optical bistability on the specially modified laser diode (LD) created on the double heterostructure Ga_1-xAl_xAl/GaAs with saturable absorption section. To prove the bistability, the time method for bistability impulse verification (BIV) by bistable laser diode (BLD) was proposed. With the use of the BIV method, basic parameters of the hysterisis loop of the W-A characteristic samples of realized BLD were determined. Also the mathematic model of the W-A characteristic was derived, used for the simulation of the characteristic for the realized BLD. Element values of the electrical equivalent circuit of the BLD for small changes of signal were calculated for selected operating points of the simulated W-A characteristics. The dependency of bistability on the temperature is monitored by measuring the BLD W-A characteristic.

Citation Download Citation

Vítězslav Jeřábek and Ivan Hüttel "Theoretical description and experiment to prove the bistability of the semiconductor laser diode", Proc. SPIE 6286, Advances in Thin-Film Coatings for Optical Applications III, 62860L (28 August 2006); https://doi.org/10.1117/12.680764

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