The new GaN lasers represent a unique combination of compactness, reliability, energy efficiency, and short wavelength.
With respect to the previous state of the art in direct laser write lithography, based on gas lasers, this is resulting in a
breakthrough, and is opening the way to real desktop micropatterning. The field of diffractive optics can immediately benefit
by the availability of a new breed of pattern generators, based on such sources, mainly for fast turnaround device
development. This paper presents the technical advantages involved in the use of 405 nm GaN lasers for one-step multilevel
patterning. Beam modulation, exposure control and overall process strategy are discussed. In order to evaluate the
effectiveness of the new solution, a sample fabrication of beam shapers is also presented.