11 September 2006 Energy structure and micromechanism of photo-EMF effect in adaptive IR-detectors based on CdTe:V crystals
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Abstract
For the first time the photo-EMF measurements were carried out for CdTe crystals doped with V atoms as a result of the photogeneration of carriers from deep impurity centers to the conduction band and the tilted geometry was applied that allowed two-mentional monitoring of the vibration source. The CdTe:V crystals were excited by a He-Ne laser with λ=1.15 μm (&barh;ω=1.08 eV) and P=2 mW. The mechanism of appearance of the holographic current in the CdTe:V crystals (adaptive IR-photodetectors) taking into account of real defect structure was proposed. The frequency dependence of ac photo-EMF (holographic) current for the CdTe:V crystal was measured. It was shown that a low cutoff frequency for the laser intensity I=0.2 mW/mm2 equals 6.0 kHz that corresponds to the response time of 26 μsec.
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Yu. P. Gnatenko, M. S. Brodyn, I. O. Faryna, P. M. Bukivskij, O. A. Shigiltchoff, M. S. Furyer, R. V. Gamernyk, N. Kukhtarev, T. Kukhtareva, "Energy structure and micromechanism of photo-EMF effect in adaptive IR-detectors based on CdTe:V crystals", Proc. SPIE 6294, Infrared and Photoelectronic Imagers and Detector Devices II, 62940U (11 September 2006); doi: 10.1117/12.678751; https://doi.org/10.1117/12.678751
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