8 September 2006 SWIR HgCdTe 256x256 focal plane array technology at BAE Systems
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Abstract
This paper reports new performance data for SWIR HgCdTe 256x256 hybrid Focal Plane Arrays with cutoff wavelengths of 2.6-2.7 μm, operating at temperatures of 190 K to 220 K. The unit cell size is 30x30 μm2. Back-illuminated SWIR HgCdTe P-on-n photodiode arrays were fabricated from two-layer LPE films grown on CdZnTe substrates. Response uniformity is excellent, with σ/μ=3-4%, and response operabilities are better than 99.9%. At a temperature of 190 K and a background photon flux of 6.8x1011 ph/cm2-s, the median NEI is 1.1x109 ph/cm2-s, which is 1.4 times the BLIP NEI. NEI operabilities are better than 98.8%. Quantum efficiencies for large-area test diodes are 69% to 78%, close to the 79% upper limit imposed by reflection from the non-antireflection-coated CdZnTe substrate.
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A. Hairston, S. P. Tobin, M. Hutchins, J. Marciniec, J. Mullarkey, P. Norton, M. Gurnee, M. B. Reine, "SWIR HgCdTe 256x256 focal plane array technology at BAE Systems", Proc. SPIE 6295, Infrared Detectors and Focal Plane Arrays VIII, 62950I (8 September 2006); doi: 10.1117/12.693201; https://doi.org/10.1117/12.693201
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