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8 September 2006 SWIR HgCdTe 256x256 focal plane array technology at BAE Systems
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This paper reports new performance data for SWIR HgCdTe 256x256 hybrid Focal Plane Arrays with cutoff wavelengths of 2.6-2.7 μm, operating at temperatures of 190 K to 220 K. The unit cell size is 30x30 μm2. Back-illuminated SWIR HgCdTe P-on-n photodiode arrays were fabricated from two-layer LPE films grown on CdZnTe substrates. Response uniformity is excellent, with σ/μ=3-4%, and response operabilities are better than 99.9%. At a temperature of 190 K and a background photon flux of 6.8x1011 ph/cm2-s, the median NEI is 1.1x109 ph/cm2-s, which is 1.4 times the BLIP NEI. NEI operabilities are better than 98.8%. Quantum efficiencies for large-area test diodes are 69% to 78%, close to the 79% upper limit imposed by reflection from the non-antireflection-coated CdZnTe substrate.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Hairston, S. P. Tobin, M. Hutchins, J. Marciniec, J. Mullarkey, P. Norton, M. Gurnee, and M. B. Reine "SWIR HgCdTe 256x256 focal plane array technology at BAE Systems", Proc. SPIE 6295, Infrared Detectors and Focal Plane Arrays VIII, 62950I (8 September 2006);


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