Low background photodetectors based on AIVBVI alloys

Vladimir F. Chishko; Nikolay B. Zaletaev

doi:10.1117/12.683924

8 September 2006 Low background photodetectors based on A^IVB^VI alloys

Vladimir F. Chishko, Nikolay B. Zaletaev

Proceedings Volume 6307, Unconventional Imaging II; 63070T (2006) https://doi.org/10.1117/12.683924
Event: SPIE Optics + Photonics, 2006, San Diego, California, United States

Abstract

The performance of Pb_0.8Sn_0.2Te photodiodes and photoconductive detectors based on Pb_1-x-ySn_xGe_yTe:In epitaxial films has been investigated in a wide temperature interval and at various background fluxes. It was found that dark current of photodiodes in the temperature range 30 K < T < 100 K was due to the generation-recombination in depletion region and at T < 30 K tunneling through defects in the depletion region dominated and incremental resistance R_0tun at T < 30 K was exponential function of R_og-r at T = 77 K. Detectivity of more than 5 x 10¹² cmHz^1/2W^-1 limited by preamplifier noise at a background of 1 x 10¹² cm^-2s^-1 and T = 30 K was experimentally achieved. Pb_1-x-ySn_xGe_yTe:In epitaxial film photoconductive detectors had sensitivity in the spectral range λ < 15μm and it exponentially depended on temperature and varied from 10⁵ A/W at T = 10 K to 10² A/W at T = 30 K. Noise of the photoconductive detectors was independent of background flux when it varied from 10¹² cm^-2s^-1 to 10¹⁸ cm^-2s^-1. Multielement photoconductive detectors based on these films were fabricated and D^* = 1.7 x 10¹³ cmHz^1/2W^-1 at T ≤ 25 K was achieved.

Citation Download Citation

Vladimir F. Chishko and Nikolay B. Zaletaev "Low background photodetectors based on A^IVB^VI alloys", Proc. SPIE 6307, Unconventional Imaging II, 63070T (8 September 2006); https://doi.org/10.1117/12.683924

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