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9 July 1986 Contrast Enhancement Materials. Effects Of Process Variables On Critical Dimension Control With Altilith Cem-420.
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The effect of several key process variables on the litho-graphic performance of Altilith CEM-420 was investigated. Linewidth control in the resist image was measured by etching the substrate and electrically probing the resulting polysilicon lines with a Prometrix LithoMap LM20 system. Scanning electron microscopy was also used for some of the linewidth measurements over topography. The CEM-420 process was most effective when used in conjunction with an optimized photoresist process. We investigated lowering the resist softbake temperature and/or increasing the developer concentration. In each case the CEM-420 process performed better with the original processing conditions. Increasing the thickness of the CEM-420 layer improved linewidth control whether expressed as the change in critical dimension with change in exposure dose or as the ability to image different feature sizes at a given exposure dose. CEM-420 dramatically improved linewidth control over topography. Exposure times increased by a factor of between two and three with CEM-420. The effect of increasing exposure time on wafer throughput was miffimal. CEM-420 provided improved resolution with sodium, potassium, and metal-ion-free developers. Proximity effects were reduced with CEM-420. Modeling studies agreed with the exper-imental results showing increased exposure latitude for small feature sizes, improved resist profiles, and a reduction in the effect of standing waves.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert E. Williams, Stan Weaver, Ernest W. Balch, and John C. Sardella "Contrast Enhancement Materials. Effects Of Process Variables On Critical Dimension Control With Altilith Cem-420.", Proc. SPIE 0631, Advances in Resist Technology and Processing III, (9 July 1986);

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