Improved Bilayer Resist System Using Contrast-Enhanced Lithography With Water-Soluble Photopolymer

Masaru Sasago; Masayuki Endo; Yoshihiko Hirai; Kazufurni Ogawa; Takeshi Ishihara

doi:10.1117/12.963659

9 July 1986 Improved Bilayer Resist System Using Contrast-Enhanced Lithography With Water-Soluble Photopolymer

Masaru Sasago, Masayuki Endo, Yoshihiko Hirai, Kazufurni Ogawa, Takeshi Ishihara

Proceedings Volume 0631, Advances in Resist Technology and Processing III; (1986) https://doi.org/10.1117/12.963659
Event: 1986 Microlithography Conferences, 1986, Santa Clara, United States

Abstract

A new water-soluble contract enhanced material, WSP (Water-soluble Photopolymer), has been developed. The WSP is composed of a mainpolymer and a photobleachable reagents. The mainpolymer is a water-soluble polymer mixed with pullulan (refined through biotechnological process) and polyvinyl-pyrolidone (PVP). The photo-bleachable reagent is of a diazonium compound gorup. The introduction of the mainpolymer and photobleach-able reagent mixture has improved filmity, gas transparency, photobleaching characteristics and solubility in alkaline which are essential to the device fabrication. Submicron photoresist patterns are successfully fabricated by a simple sequence of photolithography process. The WSP layer has been applied to the bilayer resist system--deep-UV portable conformable masking (PCM)--that is not affected by VLSI's topography, and is able to fabricate highly accurate pattern. The aqueous developable layer, PMGI, with high organic solvent resistance is used in the bottom layer. Therefore, no interfacial mixing with conventional positive resist top layer is observed. Furthermore, deep-UV exposure method has been used for the KrF excimer laser optical system in order to increase high throughput. From the experiments, it has been confirmed that good resist transfer profile can be realized by the use of WSP, and that the submicron resist patterns with high aspect-ratio can be developed on the nonplaner wafer with steps of up to 41m by the combination of the WSP with the PCM system. By this technology, has been improved the weak point: variation in the line width due to the thickness of contrast-enhanced layer when the CEL technology is applied, and dependency of both the finished resist profile and the line-width accuracy on the thickness of the top layer resist when the PCM system is adopted.

Citation Download Citation

Masaru Sasago, Masayuki Endo, Yoshihiko Hirai, Kazufurni Ogawa, and Takeshi Ishihara "Improved Bilayer Resist System Using Contrast-Enhanced Lithography With Water-Soluble Photopolymer", Proc. SPIE 0631, Advances in Resist Technology and Processing III, (9 July 1986); https://doi.org/10.1117/12.963659

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