To Layer Resist For Plasma Etching

H. H. Wang; E. Lin

doi:10.1117/12.963656

9 July 1986 To Layer Resist For Plasma Etching

H. H. Wang, E. Lin

Proceedings Volume 0631, Advances in Resist Technology and Processing III; (1986) https://doi.org/10.1117/12.963656
Event: 1986 Microlithography Conferences, 1986, Santa Clara, United States

Abstract

A capped photoresist mask of Kodak 809 on PN with minimal undercut is developed. The advantage of leaving Kodak 809 cap is that it offers better erosion resistance in the chlorine-containing plasma. The undercut of PMMA is dependent on the incidence angle of ultraviolet light to the resist. A wide incident angle creates substantial undercut while a normal incidence produces very slight undercut.

Citation Download Citation

H. H. Wang and E. Lin "To Layer Resist For Plasma Etching", Proc. SPIE 0631, Advances in Resist Technology and Processing III, (9 July 1986); https://doi.org/10.1117/12.963656

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