Half Micron Cmos Device Fabrication Using Hybrid Lithography With X-Ray And Optical Steppers

K. Suzuki; J. Matsui; K. Okada; N. Endo; Y. Iida

doi:10.1117/12.963678

30 June 1986 Half Micron Cmos Device Fabrication Using Hybrid Lithography With X-Ray And Optical Steppers

K. Suzuki, J. Matsui, K. Okada, N. Endo, Y. Iida

Proceedings Volume 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V; (1986) https://doi.org/10.1117/12.963678
Event: 1986 Microlithography Conferences, 1986, Santa Clara, United States

Abstract

Hybrid lithography technology, using a newly developed X-ray stepper and a conventional optical stepper, was applied to half micron CMOS device fabrication. X-ray lithography was applied to four principal mask levels in thirteen lithography steps. In order to correct the geometrical run out in X-ray lithography levels, every die on X-ray masks had been shrunk to 99.99%, in length, of the original pattern. For realizing sufficient resolution and mask alignment accuracy, X-ray mask to wafer spacing was kept at 15 ±lμm, during the mask alignment and X-ray exposure process. Several advanced technologies, such as X-ray exposure in open air, protecting the resist from oxygen, and deep UV curing for X-ray resists, were applied. As a result, a half micron 101 stage CMOS ring-oscillator, which was designed with a submicron alignment margin, has been successfully fabricated, using a single layer resist process.

Citation Download Citation

K. Suzuki, J. Matsui, K. Okada, N. Endo, and Y. Iida "Half Micron Cmos Device Fabrication Using Hybrid Lithography With X-Ray And Optical Steppers", Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); https://doi.org/10.1117/12.963678

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