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30 June 1986 Maskless Etching Of Inp And Gaas By Means Of Ion Beam Assisted Etching
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The maskless ion beam assisted etching of InP and GaAs was performed by bombarding 35 keV focused Ga+ beam in chlorine gas atmosphere at a pressure up to 80 mTorr and effect of etching parameters including substrate temperature and bombardment angle was investigated. It was observed that the enhancement of etching rate for InP is small if the bombardment is done at temperature below about 100°C. 20-30 times enhancement over physical sputter etching is achieved for bombardment at 140°C and a 6 μm deep, 0.3μm wide grooves was formed without redeposition effects. For GaAs, about 10 times enhancement was observed for bombardment at room temperature in chlorine atmosphere. The requirement of elevated temperature for InP is probably due to the lower vapor pressure for indium chlorides which is formed by the ion bombardment. Auger analysis of the etched surface was also performed.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kenj i Gamo, Yukinori Ochiai, Kazuhiko Shioyama, and Susumu Namba "Maskless Etching Of Inp And Gaas By Means Of Ion Beam Assisted Etching", Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986);

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