Translator Disclaimer
Paper
30 June 1986 Sub-100nm pattern fabrication in e-beam lithography
Author Affiliations +
Abstract
Sub-100nm patterns have been fabricated in thick PMMA film on thick silicon substrates at low beam voltages using commercial e-beam machines. A higher contrast and an improved resolution are obtained by using an IPA development. 50-100nm lines are fabricated in 0.5- 1.0μm PMMA film on silicon substrates with 20-25kV e-beams. Practical aspects of sub-100nm pattern fabrication have been estimated. Pattern accuracy, field butting error, and overlay accuracy are better than ±0.1 μm 3 sigma.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshihiro Todokoro, Hiroshi Yamashita, and Yuki Yaegashi "Sub-100nm pattern fabrication in e-beam lithography", Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); https://doi.org/10.1117/12.963683
PROCEEDINGS
7 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT


Back to Top