Sub-Micron Pattern Inspection System Using Electron Beam

T. Kato; K. Saitoh; S. Takeuchi; K. Moriizumi; K. Shibayama

doi:10.1117/12.963686

30 June 1986 Sub-Micron Pattern Inspection System Using Electron Beam

T. Kato, K. Saitoh, S. Takeuchi, K. Moriizumi, K. Shibayama

Proceedings Volume 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V; (1986) https://doi.org/10.1117/12.963686
Event: 1986 Microlithography Conferences, 1986, Santa Clara, United States

Abstract

The experimental Electron Beam Inspection System (EBIS) which is used for sub-micron patterns of VLSI circuits is developed and described here. This system is designed to investigate algorithms, which extract defects, and various characteristics to use the electron beam (EB). Following will be mentioned : the configuration of EBIS, description of hardwares and softwares, considerations about pattern alignment, and algorithm extracting defects using the EB.

Citation Download Citation

T. Kato, K. Saitoh, S. Takeuchi, K. Moriizumi, and K. Shibayama "Sub-Micron Pattern Inspection System Using Electron Beam", Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); https://doi.org/10.1117/12.963686

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