30 June 1986 X-Ray Mask Distortion: Process And Pattern Dependence
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Abstract
X-Ray lithography is widely believed to occupy an important future lithographic niche in the vicinity of 0.5 micron and below."] It will be technically easier to achieve resolution and depth of focus with X-Ray than with optical steppers in this lithographic regime. It will be much less expensive to print large volume runners like Dynamic RAMs, microprocessors, or CODECs with X-Ray than with electron beam direct write. However, it is also recognized that distortion in the X-Ray mask membrane may be a major obstacle to the exploitation of this niche, because of the extraordinary registration requirements of submicron design rules.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Arnold W. Yanof, Arnold W. Yanof, Douglas J. Resnick, Douglas J. Resnick, Constance A. Jankoski, Constance A. Jankoski, William A. Johnson, William A. Johnson, } "X-Ray Mask Distortion: Process And Pattern Dependence", Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); doi: 10.1117/12.963676; https://doi.org/10.1117/12.963676
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