X-Ray Step-And-Repeat Lithography System For Submicron VLSI

R . B. McIntosh Jr.; G P. Hughes; J L Kreuter; G R Conti Jr.

doi:10.1117/12.963680

30 June 1986 X-Ray Step-And-Repeat Lithography System For Submicron VLSI

R . B. McIntosh Jr., G P. Hughes, J L Kreuter, G R Conti Jr.

Proceedings Volume 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V; (1986) https://doi.org/10.1117/12.963680
Event: 1986 Microlithography Conferences, 1986, Santa Clara, United States

Abstract

Perkin-Elmer's X-Ray Step-and-Repeat lithography system has been developed to meet the IC industry's stringent requirements for fabricating submicron VLSI chips. System performance and key equipment features will be discussed along with early subsystem and system test data. The X-ray system uses a 10-kW source to provide high-throughput exposures with a resolution of 0.17 micron. X-rays are generated by focusing a 10-KeV electron beam within a 1.5-mm spot on the rim of a rotating, water-cooled anode. Mask-to-wafer alignment is sensed and controlled during exposure in all six degrees of mechanical freedom to provide 0.1 micron alignment accuracy. The precision wafer stage has a closed-loop positioning accuracy of 0.01 micron. In-plane stage motion is accomplished using a three-axis planar motor that rides on a stiff air bearing over a patterned plate that serves as the motor's platen. A laser interferometer option can be added to the system to monitor the position of the wafer stage to an accuracy of 0.02 micron.

Citation Download Citation

R . B. McIntosh Jr., G P. Hughes, J L Kreuter, and G R Conti Jr. "X-Ray Step-And-Repeat Lithography System For Submicron VLSI", Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); https://doi.org/10.1117/12.963680

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