30 August 2006 Strong photoluminescence caused by optical transitions between electron and hole Tamm-like interface states in ZnSe/BeTe heterostructures
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Abstract
We present an experimental data, which demonstrate a basically new mechanism of carrier radiative recombination in semiconductor heterostructures-recombination via Tamm-like interface states. Bright line was observed in photoluminescence spectra of periodical ZnSe/BeTe heterostructures at the energies, which correspond to the optical transitions between electron and hole Tamm-like interface states in studied heterosystem. Photoluminescence via Tamm-like interface states was observed for wide range excitation densities in the temperature range from 15K to 160K. It was found that for short-period ZnSe/BeTe heterostructures at low temperatures and at low excitation densities photoluminescence via Tamm-like interface states is much stronger than conventional interband radiative recombination.
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A. S. Gurevich, A. S. Gurevich, V. P. Kochereshko, V. P. Kochereshko, A. N. Litvinov, A. N. Litvinov, A. V. Platonov, A. V. Platonov, B. A. Zyakin, B. A. Zyakin, B. A. Waag, B. A. Waag, G. Landwehr, G. Landwehr, } "Strong photoluminescence caused by optical transitions between electron and hole Tamm-like interface states in ZnSe/BeTe heterostructures", Proc. SPIE 6321, Nanophotonic Materials III, 632109 (30 August 2006); doi: 10.1117/12.680052; https://doi.org/10.1117/12.680052
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