11 September 2006 Narrow stripe selective growth of InGaAlAs waveguides used for buried heterostructure lasers
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Abstract
The narrow stripe selective growth of the InGaAlAs bulk waveguides and InGaAlAs MQW waveguides was first investigated. Flat and clear interfaces were obtained for the selectively grown InGaAlAs waveguides under optimized growth conditions. These selectively grown InGaAlAs waveguides were covered by specific InP layers, which can keep the waveguides from being oxidized during the fabrication of devices. PL peak wavelength shifts of 70 nm for the InGaAlAs bulk waveguides and 73 nm for the InGaAlAs MQW waveguides were obtained with a small mask stripe width varying from 0 to 40 μm, and were interpreted in considering both the migration effect from the masked region (MMR) and the lateral vapor diffusion effect (LVD). The quality of the selectively grown InGaAlAs MQW waveguides was confirmed by the PL peak intensity and the PL FWHM. Using the narrow stripe selectively grown InGaAlAs MQW waveguides, then the buried heterostructure (BH) lasers were fabricated by a developed unselective regrowth method, instead of conventional selective regrowth. The InGaAlAs MQW BH lasers exhibit good performance characteristics, with a high internal differential quantum efficiency of about 85% and an internal loss of 6.7 cm-1.
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W. Feng, W. Feng, J. Q. Pan, J. Q. Pan, F. Zhou, F. Zhou, L. F. Wang, L. F. Wang, J. Bian, J. Bian, B. J. Wang, B. J. Wang, X. An, X. An, L. J. Zhao, L. J. Zhao, H. L. Zhu, H. L. Zhu, W. Wang, W. Wang, } "Narrow stripe selective growth of InGaAlAs waveguides used for buried heterostructure lasers", Proc. SPIE 6321, Nanophotonic Materials III, 63210I (11 September 2006); doi: 10.1117/12.677615; https://doi.org/10.1117/12.677615
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