Coherent phenomena in a semiconductor quantum well system: effects of double dark states

Evangelos Voutsinas; Antonios Fountoulakis; Andreas F. Terzis; John Boviatsis; Sotirios Baskoutas; Emmanuel Paspalakis

doi:10.1117/12.678994

14 September 2006 Coherent phenomena in a semiconductor quantum well system: effects of double dark states

Evangelos Voutsinas, Antonios Fountoulakis, Andreas F. Terzis, John Boviatsis, Sotirios Baskoutas, Emmanuel Paspalakis

Author Affiliations +

Proceedings Volume 6321, Nanophotonic Materials III; 63210P (2006) https://doi.org/10.1117/12.678994
Event: SPIE Optics + Photonics, 2006, San Diego, California, United States

Abstract

We analyze the steady state and transient properties of the polarization and of the electronic population in a triple semiconductor quantum well structure with tunneling induced interference. We first derive the dark states of the system and show that this structure can lead to double dark states. Then, we show that under the dark state conditions the system can exhibit tunneling induced transparency, slow light, transient gain without inversion and coherent population trapping. The dynamics of the polarization and of the electronic population, as well as the total trapped electronic population in the system, are found to be depended on which dark state condition is satisfied.

Citation Download Citation

Evangelos Voutsinas, Antonios Fountoulakis, Andreas F. Terzis, John Boviatsis, Sotirios Baskoutas, and Emmanuel Paspalakis "Coherent phenomena in a semiconductor quantum well system: effects of double dark states", Proc. SPIE 6321, Nanophotonic Materials III, 63210P (14 September 2006); https://doi.org/10.1117/12.678994

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