3 October 2006 Scanning nano-Raman spectroscopy of semiconducting structures
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Abstract
Tip-enhanced Raman spectroscopy (TERS) using side illumination is a promising spectroscopic tool for nanoscale characterization of chemical composition, structure, stresses and conformational states of non-transparent samples. Recent progress has shown signal enhancements for a variety of samples, including break-through enhancements of semiconductors. In this work, optimization of the polarization geometry increases contrast between near-field and far-field signals on Si and improves imaging quality. Two-dimensional images of semiconductor nanostructures show reasonable agreement between topographical and TERS images. These recent TERS results using both silver- and gold-coated tips demonstrate localization of the Raman enhancement to within approximately 20 nm of the tip. Also, the enhanced Raman signal of a strained Si layer is separated from an underlying Si substrate, which is encouraging for potential strain distribution analysis of silicon nanostructures.
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R. D. Hartschuh, R. D. Hartschuh, N. Lee, N. Lee, D. Mehtani, D. Mehtani, A. Kisliuk, A. Kisliuk, M. D. Foster, M. D. Foster, A. P. Sokolov, A. P. Sokolov, J. F. Maguire, J. F. Maguire, } "Scanning nano-Raman spectroscopy of semiconducting structures", Proc. SPIE 6324, Plasmonics: Nanoimaging, Nanofabrication, and their Applications II, 63240N (3 October 2006); doi: 10.1117/12.681621; https://doi.org/10.1117/12.681621
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