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30 August 2006 In situ infrared absorption spectroscopy for thin film growth by atomic layer deposition
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Abstract
This paper describes the challenges faced by the microelectronics community in growing ultra-thin films using Atomic Layer Deposition and summarizes how mechanistic information derived from in situ infrared absorption spectroscopy studies can guide the growth of sub-nanometer films. Examples are drawn from the growth of high-k dielectrics (e.g. HfO2 ) on oxide-free silicon surfaces to achieve the lowest effective oxide thickness.
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Yu Wang, Min Dai, Sandrine Rivillon, Ming-Tsung Ho, and Yves J. Chabal "In situ infrared absorption spectroscopy for thin film growth by atomic layer deposition", Proc. SPIE 6325, Physical Chemistry of Interfaces and Nanomaterials V, 63250G (30 August 2006); https://doi.org/10.1117/12.681331
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